Izazinzulu ezivela kwi-MIT ziye zazisa i-silicon ekhoyo yelanga iiseli nge singlet exciton fission indlela. Oku kunokonyusa ukusebenza kakuhle kwe yelanga iiseli ukusuka kwi-18 ekhulwini ukuya phezulu ukuya kuma-35 ekhulwini ngaloo ndlela kuphinda-phinda amandla aphumayo ngaloo ndlela kuncitshiswa iindleko zobugcisa belanga.
Kuya kuba yimfuneko ukunciphisa ukuxhomekeka kwethu kumafutha efosili kunye nokwakha ubugcisa ukwenzela ikamva elizinzileyo. Amandla elanga ngumthombo ohlaziyekayo we amandla apho Ilanga ukukhanya kuguqulwa kube ngamandla ombane. Iiseli zelanga ziqhele ukwenziwa ngesilicon esebenzisa inkqubo ye-photovoltaic ukuguqula ilanga kumbane. Iiseli zeTandem nazo ziyilwa ezibandakanya iiseli ze-perovskites apho onke amacandelo yelanga iiseli zinokubopha Ilanga amandla avela kuluhlu lwawo olwahlukeneyo kwaye ngaloo ndlela abe nokusebenza okuphezulu. Iiseli zelanga ezikhoyo namhlanje zilinganiselwe ngokusebenza kwazo okuyi-15-22 ekhulwini kuphela.
Uphononongo olupapashwe ngoJulayi 3 ngo indalo ubonise indlela i-silicon yelanga ukusebenza kweeseli kunokunyuswa ukuya kutsho kuma-35 epesenti ngokufaka isiphumo esibizwa ngokuba yi-singlett exciton fission. Kule mpembelelo iqhekeza elinye lokukhanya (ifoton) inokuvelisa izibini ezimbini ze-electron-hole ngokuchasene nenye kuphela. I-exciton fission enye ibonwa kwizinto ezininzi ukusukela oko yafunyanwa ngeminyaka yoo-1970. Uphononongo lwangoku lujolise ekuguquleleni esi siphumo okokuqala ngqa ukuba sisebenze yelanga iseli.
Abaphandi badlulise i-exciton fission effect enye ukusuka kwi-tetracene - into eyaziwayo eyibonisayo - kwi-silicon yekristale. Le nto i-tetracene yi-hydrocarbon eziphilayo isemiconductor. Ukutshintshwa kwaphunyezwa ngokubeka umaleko obhityileyo owongezelelweyo we-hafnium oxynitride (8 angstrom) phakathi kwe-excitonic tetracene layer kunye nesilicon. yelanga iseli kunye nokuzidibanisa.
Lo maleko omncinci we-hafnium oxynitride usebenze njengebhulorho kwaye wenze ukuba kube nokwenzeka ukuveliswa kweefotoni zamandla aphezulu kumaleko we-tetracene owathi wakhupha ii-electron ezimbini kwiseli yesilicon ngokuchasene nesiqhelo. Oku kubonakaliswa kwe-silicon yelanga iseli yanciphisa ilahleko ye-thermalization kwaye yenza ukuba uvelwano olungcono ekukhanyeni. Imveliso yamandla ye yelanga iiseli ziphindaphindeke kabini njengoko imveliso engaphezulu yenziwa kwiindawo eziluhlaza naluhlaza okwesibhakabhaka. Oku kunokonyusa ukusebenza kakuhle kwe yelanga iiseli ukuya phezulu ukuya kuma-35 ekhulwini. Itekhnoloji iyahluka kwiiseli zelanga ze-tandem njengoko yongeza nje ngoku ngakumbi kwi-silicon ngaphandle kokongeza iiseli ezongezelelweyo.
Uphononongo lwangoku lubonise ukuphuculwa kweeseli ze-silicon ze-singlet-fission ezinokubonisa ukuphumelela okwandisiweyo kwaye ngaloo ndlela zinciphise iindleko zokuvelisa amandla ombane welanga.
***
{Unokufunda iphepha lokuqala lophando ngokunqakraza ikhonkco le-DOI elinikwe ngezantsi kuluhlu lwemithombo ecatshulweyo (s)}
Umthombo (s)
Einzinger, M. et al. 2019. Ukuqonda i-silicon nge-singlett exciton fission kwi-tetracene. Indalo. 571. https://doi.org/10.1038/s41586-019-1339-4
